All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts

New York, NY / IEEE (2018) [Journal Article]

IEEE transactions on electron devices
Volume: 65
Issue: 10
Page(s): 4129-4134

Authors

Selected Authors

Pandey, Himadri
Shaygan, Mehrdad
Sawallich, Simon
Kataria, Satender
Wang, Zhenxing

Other Authors

Noculak, Achim
Otto, Martin
Nagel, Michael
Negra, Renato
Neumaier, Daniel
Lemme, Max Christian

Identifier