All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts

Pandey, Himadri; Shaygan, Mehrdad; Sawallich, Simon; Kataria, Satender; Wang, Zhenxing; Noculak, Achim; Otto, Martin; Nagel, Michael; Negra, Renato; Neumaier, Daniel; Lemme, Max C. (Corresponding author)

New York, NY : IEEE (2018)
Journal Article

In: IEEE transactions on electron devices
Volume: 65
Issue: 10
Page(s)/Article-Nr.: 4129-4134


  • Chair of High Frequency Electronics [618510]
  • Chair of Electronic Devices [618710]